Alliance Semiconductor AS4C14400
The AS4C14400 is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words × 4 bits. The AS4C14400 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The AS4C14400 features a high speed page mode operation in which high speed read, write and read-write are performed on any of the 1024 × 4 bits defined by the column address.| Part No. | AS4C14400 |
|---|---|
| Datasheet | AS4C14400 Download |
| Manufacturer |  Alliance Semiconductor |
| Description | 1M-bit x 4 CMOS DRAM (Fast page mode or EDO) |
| Buy | Stock & Price |
FEATURES
● Organization: 1,048,576 words × 4 bits● High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time
● 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh
● Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O
● Fast page mode (AS4C14400) or EDO (AS4C14405) Pin arrangement SOJ I/O0 I/O1 WE RAS A9 1 2 3 4 5 A0 A1 A2 A3 VCC 9 10 11 12 13 Selection guide Maximum RAS access time Maximum CAS access time Maximum column address access time m o .c U 4 t e e h S a t a .D w w w - 300 mil, 20/26-pin SOJ - 300 mil, 20/26-pin TSOP
● Read-modify-write
● TTL-compatible, three-state I/O
● JEDEC standard packages
● Single 5V power supply
● ESD protection ≥ 2001V
● Latch-up current ≥ 200 mA Pin designation Pin(s) RAS OE A0 to A9 TSOP
DESCRIPTION
26 25 24 23 22 GND I/O3 I/O2 CAS OE I/O0 I/O1 WE RAS A9 1 2 3 4 5 26 25 24 23 22 GND I/O3 I/O2 CAS OE Address inputs Input/output Row...
