AS4C14400 Datasheet PDF ((AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO)) | Download Alliance Semiconductor AS4C14400

AS4C14400 - (AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO)

Description

26 25 24 23 22 GND I/O3 I/O2 CAS OE I/O0 I/O1 WE RAS A9 1 2 3 4 5 26 25 24 23 22 GND I/O3 I/O2 CAS OE Address inputs Input/output Row address strobe Output enable I/O0 to I/O3 CAS WE VCC 18 17 16 15 14 A8 A7 A6 A5 A4 A0 A1 A2 A3 VCC 9 10 11 12 13 18 17 16 15 14 A8 A7 A6 A5 A4 Column

Features

Organization: 1,048,576 words × 4 bits.
High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time.
1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh.
Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O.
Fast page mode (AS4C14400) or EDO (AS4C14405) Pin arrangement SOJ I/O0 I/O1 WE RAS A9 1 2 3 4 5 A0 A1 A2 A3 VCC 9 10 11 1.

Datasheet Details

Part number	AS4C14400
Manufacturer	Alliance Semiconductor
File Size	398.47 KB
Description	(AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO)
Datasheet	AS4C14400 Datasheet
Additional preview pages of the AS4C14400 datasheet.

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Full PDF Text Transcription

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High Performance 1M×4 CMOS DRAM AS4C14400 AS4C14405 ® 1M-bit × 4 CMOS DRAM (Fast page mode or EDO) Preliminary information Features • Organization: 1,048,576 words × 4 bits • High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh • Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O • Fast page mode (AS4C14400) or EDO (AS4C14405) Pin arrangement SOJ I/O0 I/O1 WE RAS A9 1 2 3 4 5 A0 A1 A2 A3 VCC 9 10 11 12 13 Selection guide Maximum RAS access time Maximum CAS access time Maximum column address access time m o .c U 4 t e e h S a t a .

Published: Mar 5, 2006 |