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AS4C14400 Datasheet (as4c14400 / As4c14405) 1m-bit X 4 CMOS Dram (fast Page Mode Or Edo)

Manufacturer: Alliance Semiconductor

Overview: High Performance 1M×4 CMOS DRAM AS4C14400 AS4C14405 ® 1M-bit × 4 CMOS DRAM (Fast page mode or EDO) Preliminary.

Datasheet Details

Part number AS4C14400
Manufacturer Alliance Semiconductor
File Size 398.47 KB
Description (AS4C14400 / AS4C14405) 1M-bit x 4 CMOS DRAM (Fast page mode or EDO)
Datasheet AS4C14400_AllianceSemiconductor.pdf

General Description

26 25 24 23 22 GND I/O3 I/O2 CAS OE I/O0 I/O1 WE RAS A9 1 2 3 4 5 26 25 24 23 22 GND I/O3 I/O2 CAS OE Address inputs Input/output Row address strobe Output enable I/O0 to I/O3 CAS WE VCC 18 17 16 15 14 A8 A7 A6 A5 A4 A0 A1 A2 A3 VCC 9 10 11 12 13 18 17 16 15 14 A8 A7 A6 A5 A4 Column address strobe Read/write control Power (5.0 ± 0.5V) GND Ground Symbol tRAC tCAA tCAC 4C14400-40 40 20 10 10 70 30 90 4C14400-50 50 25 13 13 90 35 80 4C14400-60 60 30 15 15 40 70 4C14400-70 70 35 18 18 45 60 Unit ns ns ns ns ns Maximum output enable (OE) access time Minimum read or write cycle time Minimum fast page mode cycle time Maximum operating current Maximum CMOS standby current Shaded areas contain advance information.

m o .c U 4 t e e h S a at .D w w ALLIANCE SEMICONDUCTOR w tOEA tRC tPC 110 130 ns ICC1 ICC5 mA 1.0 1.0 1.0 1.0 mA AS4C14400 ® Functional description The AS4C14400 is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words

Key Features

  • Organization: 1,048,576 words × 4 bits.
  • High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time.
  • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh.
  • Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O.
  • Fast page mode (AS4C14400) or EDO (AS4C14405) Pin arrangement SOJ I/O0 I/O1 WE RAS A9 1 2 3 4 5 A0 A1 A2 A3 VCC 9 10 11 1.

More Datasheets from Alliance Semiconductor

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AS4C14400 Distributor