• Part: AS4C14405
  • Description: 1M-bit x 4 CMOS DRAM (Fast page mode or EDO)
  • Manufacturer: Alliance Semiconductor
  • Size: 398.47 KB
Download AS4C14405 Datasheet PDF
Alliance Semiconductor
AS4C14405
Features - Organization: 1,048,576 words × 4 bits - High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time - 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh - Low power consumption - Active: 385 m W max (-60) - Standby: 5.5 m W max, CMOS I/O - Fast page mode (AS4C14400) or EDO (AS4C14405) Pin arrangement I/O0 I/O1 WE RAS A9 1 2 3 4 5 A0 A1 A2 A3 VCC 9 10 11 12 13 Selection guide Maximum RAS access time Maximum CAS access time Maximum column address access time m o .c U 4 t e e h S a t a .D w w w - 300 mil, 20/26-pin SOJ - 300 mil, 20/26-pin TSOP - Read-modify-write - TTL-patible, three-state I/O - JEDEC standard packages - Single 5V power supply - ESD protection ≥ 2001V - Latch-up current ≥ 200 m A Pin designation Pin(s) RAS OE A0 to A9 TSOP Description 26 25 24 23 22 GND I/O3 I/O2 CAS OE I/O0 I/O1 WE RAS A9 1 2 3 4 5 26 25 24 23 22 GND I/O3 I/O2 CAS OE Address...