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AS4C1M16F5 - 5V 1M x 16 CMOS DRAM

Description

42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 VSS DQ16 DQ15 DQ14 DQ13 VSS DQ12 DQ11 DQ10 DQ9 NC LCAS UCAS OE A9 A8 A7 A6 A5 VCC DQ1 DQ2 DQ3 DQ4 VCC DQ5 DQ6 DQ7 DQ8 NC 1 2 3 4 5 6 7 8 9 10 11 50 49 48 47 46 45 44 43 42 41 40 VSS DQ16 DQ15 DQ14 DQ13 VSS DQ12 DQ11 DQ10 DQ9 N

Features

  • Organization: 1,048,576 words × 16 bits.
  • High speed - 45/50/60 ns RAS access time - 20/20/25 ns fast page cycle time - 10/12/15 ns CAS access time.
  • Low power consumption - Active: 880 mW max (AS4C1M16F5-60) - Standby: 11 mW max, CMOS DQ.
  • Fast page mode.
  • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh.
  • Read-modify-write.
  • TTL-compatible, three-state DQ.
  • JEDEC standard package and pinout - 400.

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Datasheet Details

Part number AS4C1M16F5
Manufacturer Alliance Semiconductor
File Size 633.55 KB
Description 5V 1M x 16 CMOS DRAM
Datasheet download datasheet AS4C1M16F5 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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August 2001 ® AS4C1M16F5 5V 1M×16 CMOS DRAM (fast-page mode) Features • Organization: 1,048,576 words × 16 bits • High speed - 45/50/60 ns RAS access time - 20/20/25 ns fast page cycle time - 10/12/15 ns CAS access time • Low power consumption - Active: 880 mW max (AS4C1M16F5-60) - Standby: 11 mW max, CMOS DQ • Fast page mode • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 400 mil, 42-pin SOJ - 400 mil, 44/50-pin TSOP 2 • 5V power supply • Industrial and commercial temperature available Pin arrangement SOJ Vcc DQ1 DQ2 DQ3 '4 Vcc DQ5 DQ6 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 DQ7 DQ8 NC NC WE RAS NC NC A0 A1 A2 A3 Vcc Selection guide Maximum RA
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