Datasheet Summary
August 2001
®
5V 1M×16 CMOS DRAM (fast-page mode) Features
- Organization: 1,048,576 words × 16 bits
- High speed
- 45/50/60 ns RAS access time
- 20/20/25 ns fast page cycle time
- 10/12/15 ns CAS access time
- Low power consumption
- Active: 880 mW max (AS4C1M16F5-60)
- Standby: 11 mW max, CMOS DQ
- Fast page mode
- 1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh
- Read-modify-write
- TTL-patible, three-state DQ
- JEDEC standard package and pinout
- 400 mil, 42-pin SOJ
- 400 mil, 44/50-pin TSOP 2
- 5V power supply
- Industrial and mercial temperature available
Pin arrangement
Vcc DQ1 DQ2 DQ3 '4 Vcc DQ5 DQ6 1 2 3 4 5 6 7 8 9 10 11...