AS4C1M16E5 - 5V 1M x 16 CMOS DRAM

Product Overview

Alliance Semiconductor

Datasheet Details

Part number	AS4C1M16E5
Manufacturer	Alliance Semiconductor
File Size	635.37 KB
Description	5V 1M x 16 CMOS DRAM
Datasheet	AS4C1M16E5 Datasheet
Additional preview pages of the AS4C1M16E5 datasheet.

Product details

Description

Address inputs Row address strobe Input/output Output enable Write enable Column address strobe, upper byte Column address strobe, lower byte Symbol tRAC tAA tCAC tOEA tRC tHPC ICC1 ICC5 -45 45 23 10 12 75 20 155 2.0 -50 50 25 12 13 80 20 145 2.0 -60 60 30 15 15 100 Unit ns ns ns ns ns mA mA Y $OOLDQFH 6HPLFRQGXFWRU w w w .D a at 135 2.0 Sh 25 t e e 4U ns .m o c 3 RI &RSULJKW $OOLDQFH 6HPLFRQGXFWRU $OO ULJKWV UHVHUYHG $6&0( )XQFWLRQDO GHVFU

Features

hyper page mode operation where read and write operations within a single row (or page) can be executed at very high speed by toggling column addresses within that row. Row and column addresses are alternately latched into input buffers using the falling edge of RAS and xCAS inputs, respectively. Also, RAS is used to make the column address latch transparent, enabling.

📁 Similar Datasheet

AS4C1M16S - 1M x 16 bit Synchronous DRAM (Alliance Memory)
AS4C1M16S-C - 1M x 16 bit Synchronous DRAM (Alliance Memory)
AS4C1M16S-I - 1M x 16 bit Synchronous DRAM (Alliance Memory)
AS4C1024 - 1M x 1 DRAM (Austin Semiconductor)
AS4C1259 - 256K x 1 DRAM (Austin Semiconductor)
AS4C1259883C - 256K x 1 DRAM (Austin Semiconductor)
AS4C4067 - 64K x 4 DRAM (Austin Semiconductor)
AS4C4256 - (Austin Semiconductor)

Other Datasheets by Alliance Semiconductor

AS4C1M16F5 - 5V 1M x 16 CMOS DRAM
AS4C128M16D2A-25BCN - 2Gb DDR2
AS4C128M16D2A-25BIN - 2Gb DDR2
AS4C128M16D3A-12BIN - 2Gb Double-Data-Rate-3 DRAM
AS4C128M16D3B-12BCN - Double-data-rate architecture
AS4C128M16D3C-93BCN - 128M x 16 bit DDR3 Synchronous DRAM

Published: Mar 5, 2006 |