Alliance Semiconductor AS4C1M16F5
The AS4C1M16F5 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The AS4C1M16F5 is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low-power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in personal and portable PCs, workstations, and multimedia and router switch applications.| Part No. | AS4C1M16F5 |
|---|---|
| Datasheet | AS4C1M16F5 Download |
| Manufacturer |  Alliance Semiconductor |
| Description | 5V 1M x 16 CMOS DRAM |
| Buy | Stock & Price |
FEATURES
● Organization: 1,048,576 words × 16 bits● High speed - 45/50/60 ns RAS access time - 20/20/25 ns fast page cycle time - 10/12/15 ns CAS access time
● Low power consumption - Active: 880 mW max (AS4C1M16F5-60) - Standby: 11 mW max, CMOS DQ
● Fast page mode
● 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh
● Read-modify-write
● TTL-compatible, three-state DQ
● JEDEC standard package and pinout - 400 mil, 42-pin SOJ - 400 mil, 44/50-pin TSOP 2
● 5V power supply
● Industrial and commercial temperature available Pin arrangement SOJ Vcc DQ1 DQ2 DQ3 '4 Vcc DQ5 DQ6 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 DQ7 DQ8 NC NC WE RAS NC NC A0 A1 A2 A3 Vcc Selection guide Maximum RAS access time Maximum CAS access time Maximum column address access time m o .c U 4 t e e h S a t a .D w w w Pin designation Pin(s) RAS TSOP 2
DESCRIPTION
42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 VSS DQ16 DQ15 DQ14 DQ13 VSS DQ12 DQ11 DQ10 DQ9 NC L...
