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AS4C1M16F5

Manufacturer: Alliance Semiconductor

AS4C1M16F5 datasheet by Alliance Semiconductor.

AS4C1M16F5 datasheet preview

AS4C1M16F5 Datasheet Details

Part number AS4C1M16F5
Datasheet AS4C1M16F5_AllianceSemiconductor.pdf
File Size 633.55 KB
Manufacturer Alliance Semiconductor
Description 5V 1M x 16 CMOS DRAM
AS4C1M16F5 page 2 AS4C1M16F5 page 3

AS4C1M16F5 Overview

v.0.9.2 Alliance Semiconductor m o c 12 15 ns . 1 of 22 Copyright © Alliance Semiconductor. The AS4C1M16F5 is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low-power and wide operating margins at ponent and system levels.

AS4C1M16F5 Key Features

  • Organization: 1,048,576 words × 16 bits
  • High speed
  • 45/50/60 ns RAS access time
  • 20/20/25 ns fast page cycle time
  • 10/12/15 ns CAS access time
  • Low power consumption
  • Active: 880 mW max (AS4C1M16F5-60)
  • Standby: 11 mW max, CMOS DQ
  • Fast page mode
  • 1024 refresh cycles, 16 ms refresh interval
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Part Number Description
AS4C1M16E5 5V 1M x 16 CMOS DRAM
AS4C128M16D2A-25BCN 2Gb DDR2
AS4C128M16D2A-25BIN 2Gb DDR2
AS4C128M16D3A-12BIN 2Gb Double-Data-Rate-3 DRAM
AS4C128M16D3B-12BCN Double-data-rate architecture
AS4C128M16D3C-93BCN 128M x 16 bit DDR3 Synchronous DRAM
AS4C128M16D3LA-12BIN 128M x 16 bit DDR3L Synchronous DRAM
AS4C128M16D3LB-12BCN Double-data-rate architecture
AS4C128M16D3LB-12BIN 2G DDR3L
AS4C128M16D3LC-12BCN 128M x 16 bit DDR3L Synchronous DRAM

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