Datasheet Details
| Part number | AOD419 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 145.40 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 AOD419 Datasheet
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Description
The AOD419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.
With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.
Features
- VDS (V) = -40V (V GS = -10V) ID = -20A RDS(ON) < 40mΩ (VGS = -10V) RDS(ON) < 65mΩ (VGS = -4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current C Avalanche Current Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation B C Maximum -40 ±20 -20 -18 -60 -20 60 50 25 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TA=25°C G TA=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=.