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AOD4191L - P-Channel MOSFET

Datasheet Summary

Description

The AOD4191 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

The device well suited for high current applications.

Features

  • VDS (V) = -40V ID = -34A RDS(ON) < 25mΩ RDS(ON) < 34mΩ (V GS = -10V) (VGS = -10V) (VGS = -4.5V) 100% UIS Tested! 100% R g Tested! -RoHS Compliant -Halogen Free.
  • Top View D TO-252 D-PAK Bottom View D S G S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain Current A Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B.

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Datasheet Details

Part number AOD4191L
Manufacturer Alpha & Omega Semiconductors
File Size 546.54 KB
Description P-Channel MOSFET
Datasheet download datasheet AOD4191L Datasheet
Additional preview pages of the AOD4191L datasheet.

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Full PDF Text Transcription

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AOD4191L P-Channel Enhancement Mode Field Effect Transistor General Description The AOD4191 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. The device well suited for high current applications. Features VDS (V) = -40V ID = -34A RDS(ON) < 25mΩ RDS(ON) < 34mΩ (V GS = -10V) (VGS = -10V) (VGS = -4.5V) 100% UIS Tested! 100% R g Tested! -RoHS Compliant -Halogen Free* Top View D TO-252 D-PAK Bottom View D S G S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain Current A Avalanche Current C Repetitive avalanche energy L=0.
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