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AOD4106 Datasheet N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AOD4106 N-Channel Enhancement Mode Field Effect Transistor General.

General Description

The AOD4106 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a low side switch in SMPS and general purpose applications.

Standard Product AOD4106 is Pb-free (meets ROHS & Sony 259 specifications).

AOD4106L is a Green Product ordering option.

Key Features

  • VDS (V) = 25V ID = 50A (VGS = 20V) RDS(ON) < 5mΩ (VGS = 20V) RDS(ON) < 6.5mΩ (VGS = 12V) RDS(ON) < 8.1mΩ (VGS = 10V) UIS Tested Rg,Ciss,Coss,Crss Tested TO-252 D-PAK Top View Drain Connected to Tab D G S G D S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation B Power Dissipation A C C Max.

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