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AOD4106 - N-Channel MOSFET

General Description

The AOD4106 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a low side switch in SMPS and general purpose applications.

Standard Product AOD4106 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 25V ID = 50A (VGS = 20V) RDS(ON) < 5mΩ (VGS = 20V) RDS(ON) < 6.5mΩ (VGS = 12V) RDS(ON) < 8.1mΩ (VGS = 10V) UIS Tested Rg,Ciss,Coss,Crss Tested TO-252 D-PAK Top View Drain Connected to Tab D G S G D S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation B Power Dissipation A C C Max.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AOD4106 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4106 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a low side switch in SMPS and general purpose applications. Standard Product AOD4106 is Pb-free (meets ROHS & Sony 259 specifications). AOD4106L is a Green Product ordering option. AOD4106 and AOD4106L are electrically identical. Features VDS (V) = 25V ID = 50A (VGS = 20V) RDS(ON) < 5mΩ (VGS = 20V) RDS(ON) < 6.5mΩ (VGS = 12V) RDS(ON) < 8.