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AOD4110 - N-Channel MOSFET

General Description

The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

Key Features

  • VDS (V) = 30V ID =40A (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V) UIS Tested! Rg,Ciss,Coss,Crss Tested D TO-252 D-PAK Top View Drain Connected to Tab G S SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Continuous Drain CurrentA Avalanche Current C Repetitive avalanche energy L=0.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SRFET AOD4110 N-Channel Enhancement Mode Field Effect Transistor TM General Description The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AOD4110 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID =40A (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.