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AOD4120 - N-Channel MOSFET

General Description

The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard product AOD4120 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • 1.4 VDS (V) = 20V ID = 25A (VGS = 10V) RDS(ON).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AOD4120 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD4120 is Pb-free (meets ROHS & Sony 259 specifications). AOD4120L is a Green Product ordering option. AOD4120 and AOD4120L are electrically identical. TO-252 D-PAK Features 1.4 VDS (V) = 20V ID = 25A (VGS = 10V) RDS(ON) <18 mΩ (VGS = 10V) RDS(ON) <25 mΩ (VGS = 4.5V) RDS(ON) <75 mΩ (VGS = 2.5V) 193 UIS Tested 18 Rg,Ciss,Coss,Crss Tested D Top View Drain Connected to Tab G S G www.DataSheet4U.