AOD412 - N-Channel MOSFET

Product Overview

Alpha & Omega Semiconductors

Part number	AOD412
Manufacturer	Alpha & Omega Semiconductors
File Size	141.77 KB
Description	N-Channel MOSFET
Datasheet	AOD412 Datasheet
Additional preview pages of the AOD412 datasheet.

The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance.

This device is ideally suited for use as a high side switch in CPU core power conversion.

Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specifications).

VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.0mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A C Maximum 30 ±20 85 65 200 30 120 100 50 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TC=25°C G TC=100°C B ID IDM IAR EAR PD P.

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Published: Dec 20, 2006 |