AOD412 Datasheet N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: www.DataSheet4U.com AOD412 N-Channel Enhancement Mode Field Effect.

Datasheet Details

Part number	AOD412
Manufacturer	Alpha & Omega Semiconductors
File Size	141.77 KB
Description	N-Channel MOSFET
Datasheet	AOD412_AlphaOmegaSemiconductors.pdf

The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance.

This device is ideally suited for use as a high side switch in CPU core power conversion.

Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specifications).

VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.0mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A C Maximum 30 ±20 85 65 200 30 120 100 50 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TC=25°C G TC=100°C B ID IDM IAR EAR PD P.

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