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AO3701 - P-Channel FET

Description

The AO3701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

It is ESD protected.

Features

  • VDS (V) = -20V ID = -3A (VGS = -10V) RDS(ON) < 80m Ω (VGS = -10V) RDS(ON) < 100m Ω (VGS = -4.5V) RDS(ON) < 145m Ω (VGS = -2.5V) ESD Rating: 2000V HBM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AO3701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO3701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. It is ESD protected. Standard Product AO3701 is Pb-free (meets ROHS & Sony 259 specifications). AO3701L is a Green Product ordering option. AO3701 and AO3701L are electrically identical. SOT-23-5 Top View G S A 1 2 3 5 4 D K Features VDS (V) = -20V ID = -3A (VGS = -10V) RDS(ON) < 80m Ω (VGS = -10V) RDS(ON) < 100m Ω (VGS = -4.5V) RDS(ON) < 145m Ω (VGS = -2.5V) ESD Rating: 2000V HBM SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.
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