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AO3702 - N-Channel MOSFET

Datasheet Summary

Description

The AO3702/L uses advanced trench technology to provide excellent RDS(ON), low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

AO3702 and AO3702L are electrically identical.

Features

  • VDS (V) = 20V ID = 3.5A (VGS = 4.5V) RDS(ON) < 62mΩ (VGS = 4.5V) RDS(ON) < 70mΩ (VGS = 2.5V) RDS(ON) < 85mΩ (VGS = 1.8V).

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Datasheet preview – AO3702

Datasheet Details

Part number AO3702
Manufacturer Alpha & Omega Semiconductors
File Size 131.56 KB
Description N-Channel MOSFET
Datasheet download datasheet AO3702 Datasheet
Additional preview pages of the AO3702 datasheet.

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Full PDF Text Transcription

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AO3702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO3702/L uses advanced trench technology to provide excellent RDS(ON), low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. AO3702 and AO3702L are electrically identical. -RoHs Complaint -AO3702L is Halogen Free Features VDS (V) = 20V ID = 3.5A (VGS = 4.5V) RDS(ON) < 62mΩ (VGS = 4.5V) RDS(ON) < 70mΩ (VGS = 2.5V) RDS(ON) < 85mΩ (VGS = 1.8V) SCHOTTKY VDS (V) = 20V, IF = 1A, VF<0.5V@0.
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