Datasheet Details
| Part number | AO3160 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 251.69 KB |
| Description | 0.04A N-Channel MOSFET |
| Datasheet | AO3160-AlphaOmegaSemiconductors.pdf |
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Overview: AO3160 600V,0.04A N-Channel MOSFET General.
| Part number | AO3160 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 251.69 KB |
| Description | 0.04A N-Channel MOSFET |
| Datasheet | AO3160-AlphaOmegaSemiconductors.pdf |
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Product Summary The AO3160 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 700V@150℃ 0.04A < 500Ω < 600Ω SOT23A Top View Bottom View D D SG G GS Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C CurrentA,F TA=70°C Pulsed Drain Current B Peak diode recovery dv/dt ID IDM dv/dt TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 600 ±20 0.04 0.03 0.12 5 1.39 0.89 -50 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 70 100 63 Max 90 125 80 D S Units V V A V/ns W °C Units °C/W °C/W °C/W Rev1: April 2012 .aosmd.
| Part Number | Description |
|---|---|
| AO3160E | N-Channel MOSFET |
| AO3400 | 30V N-Channel MOSFET |
| AO3400A | 30V N-Channel MOSFET |
| AO3401 | 30V P-Channel MOSFET |
| AO3401A | 30V P-Channel MOSFET |
| AO3401L | P-Channel MOSFET |
| AO3402 | 30V N-Channel MOSFET |
| AO3402L | N-Channel MOSFET |
| AO3403 | 30V P-Channel MOSFET |
| AO3404 | N-Channel MOSFET |