Datasheet Details
| Part number | AO3160E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 320.31 KB |
| Description | N-Channel MOSFET |
| Datasheet | AO3160E-AlphaOmegaSemiconductors.pdf |
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Overview: General.
| Part number | AO3160E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 320.31 KB |
| Description | N-Channel MOSFET |
| Datasheet | AO3160E-AlphaOmegaSemiconductors.pdf |
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• Logic Level Driving 4.5V • ESD Protection • RoHS and Halogen Free pliant Applications • Load Switch AO3160E 600V,0.04A N-Channel MOSFET Product Summary VDS @ Tj,max ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 700V 0.04A < 500Ω < 600Ω HBM Class 2 Top View D Bottom View D D SG G G AO3160E Orderable Part Number AO3160E S Package Type SOT23A Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current A,F TA=70°C Pulsed Drain Current B Peak diode recovery dv/dt VGS ID IDM dv/dt Power Dissipation A TA=25°C TA=70°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL S Form Minimum Order Quantity Tape & Reel 3000 Maximum 600 ±20 0.04 0.03 0.12 5 1.39 0.89 -55 to 150 300 Units V V A V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typical 70 100 63 Maximum 90 125 80 Units °C/W °C/W °C/W Rev.1.0: May 2018 .aosmd.
Page 1 of 5 AO3160E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Cofficient ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=5V, ID=8µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.016A VGS=4.5V, ID=0.016A gFS Forward Transconductance VDS=40V, ID=0.016A VSD Diode Forward Voltage IS=0.016A,VGS=0V IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current C DYNAMIC PARAMETERS Ciss Input Ca
| Part Number | Description |
|---|---|
| AO3160 | 0.04A N-Channel MOSFET |
| AO3400 | 30V N-Channel MOSFET |
| AO3400A | 30V N-Channel MOSFET |
| AO3401 | 30V P-Channel MOSFET |
| AO3401A | 30V P-Channel MOSFET |
| AO3401L | P-Channel MOSFET |
| AO3402 | 30V N-Channel MOSFET |
| AO3402L | N-Channel MOSFET |
| AO3403 | 30V P-Channel MOSFET |
| AO3404 | N-Channel MOSFET |