Datasheet Details
| Part number | AO4335 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 359.79 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 AO4335 Datasheet
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| Part number | AO4335 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 359.79 KB |
| Description | P-Channel MOSFET |
| Datasheet |
AO4335 Datasheet
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The AO4335 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.
This device is suitable for use as a load switch or in PWM applications.
-RoHS Compliant -AO4335 is Halogen Free Product Summary VDS = -30V ID = -10.5A (VGS = -20V) RDS(ON) < 14mΩ (VGS = -20V) RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D D Bottom View G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation A TA=25°C TA=70°C Avalanche Current B Repetitive avalanche energy 0.3mH B PD IAR EAR Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady State Steady State Symbol RθJA RθJL D G S Maximum -30 ±25 -10.5 -8 -80 3.1 2.0 -20 60 -55 to 150 Typ Max 32 40 60 75 17 24 Units V V A W A mJ °C Units °C/W °C/W °C/W Rev.1.0: October 2014 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current ID = -250µA, VGS = 0V VDS = -30V, VGS = 0V TJ = 55°C VDS = 0V, VGS = ±25V VDS = VGS ID = -250µA VGS = -10V, VDS = -5V VGS = -20V, ID = -11A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS = -10V, ID = -10A VGS = -5V, ID = -5A gFS Forward Transconductance VSD Diode Forward Voltage VDS = -5V, ID = -10A IS = -1A,VGS = 0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=-15V, f=1MH
AO4335 30V P-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AO4302 | N-Channel MOSFET |
| AO4304 | N-Channel MOSFET |
| AO4306 | 30V N-Channel MOSFET |
| AO4310 | N-Channel MOSFET |
| AO4312 | N-Channel MOSFET |
| AO4314 | 36V N-Channel MOSFET |
| AO4354 | 30V N-Channel AlphaMOS |
| AO4202 | 30V N-Channel MOSFET |
| AO4240 | 40V N-Channel MOSFET |
| AO4260 | 60V N-Channel MOSFET |