Datasheet Details
| Part number | AO6424A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 254.12 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AO6424A Datasheet
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| Part number | AO6424A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 254.12 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AO6424A Datasheet
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• Latest Trench Power MOSFET technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • System/Load Switch Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 6.5A < 35mΩ < 48mΩ TSOP6 Top View Bottom View Top View D Pi n 1 D1 D2 G3 6D 5D 4S G S Orderable Part Number AO6424A Package Type TSOP-6 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation B TA=70°C VGS ID IDM PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 6.5 5 27 2.5 1.5 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 42 68 23 Max 50 85 30 Units °C/W °C/W °C/W Rev.1.0: October 2013 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=5A VGS=4.5V, ID=4A Forward Transconductance VDS=5V, ID=5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Total Gate Charge Gate Source Charge VGS=10V, VDS=15V, ID=5A Ga
AO6424A 30V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO6424A | N-Channel MOSFET | Kexin |
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AO6424 | N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO6424 | 30V N-Channel MOSFET |
| AO6420 | 60V N-Channel MOSFET |
| AO6422 | 20V N-Channel MOSFET |
| AO6400 | 30V N-Channel MOSFET |
| AO6401 | 30V P-Channel MOSFET |
| AO6401A | P-Channel MOSFET |
| AO6402 | 30V N-Channel MOSFET |
| AO6402A | 30V N-Channel MOSFET |
| AO6402L | N-Channel MOSFET |
| AO6403 | 30V P-Channel MOSFET |