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AOB11S65 - Power Transistor

Description

The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

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AOT11S65/AOB11S65/AOTF11S65 650V 11A α MOS TM Power Transistor General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 45A 0.399Ω 13.2nC 2.
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