Datasheet Details
| Part number | AOB12N50 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 464.82 KB |
| Description | 12A N-Channel MOSFET |
| Download | AOB12N50 Download (PDF) |
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| Part number | AOB12N50 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 464.82 KB |
| Description | 12A N-Channel MOSFET |
| Download | AOB12N50 Download (PDF) |
|
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Product Summary The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 600V@150℃ 12A < 0.52W D G AOT12N50 DS G AOTF12N50 G DS S AOB12N50 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT12N50/AOB12N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID 12 8.4 Pulsed Drain Current C IDM 48 Avalanche Current C IAR 5.5 Repetitive avalanche energy C EAR 454 Single plused avalanche energy G EAS 908 MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt 40 5 TC=25°C Power Dissipation B Derate above 25oC PD 250 2 AOTF12N50 12* 8.4* 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
AOT12N50/AOB12N50 65 0.5 0.5 AOTF12N50 65 -2.5 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev 9.1: April 2024 www.aosmd.com Page 1 of 6 AOT12N50/AOB12N50/AOTF12N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C 500 600 V BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μ
AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOB12N50 | 12A N-Channel MOSFET | Freescale |
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AOB12N50 | N-Channel MOSFET | INCHANGE |
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