Datasheet Details
| Part number | AOD32334C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 347.84 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AOD32334C-AlphaOmegaSemiconductors.pdf |
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Overview: AOD32334C 30V N-Channel MOSFET General.
| Part number | AOD32334C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 347.84 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AOD32334C-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Applications • Ideal for Load Switch Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) ESD protection 100% UIS Tested 100% Rg Tested 30V 12A < 20mΩ < 26mΩ Top View D TO-252 DPAK Bottom View D D G G Orderable Part Number AOD32334C S G S Package Type TO-252 Form Tape & Reel S Minimum Order Quantity 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 12 12 34 11 9 15 11 18 7 4.1 2.6 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 16.7 40 4.5 Max 30 50 7 Units °C/W °C/W °C/W Rev.2.0: July 2019 www.aosmd.com Page 1 of 6 AOD32334C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 μA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±10 μA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 1.8 2.3 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=12A TJ=125°C 16 20 mΩ 24 30 VGS=4.5V, ID=12A 20 26 mΩ gFS Forward Transconductance VDS=5V, ID=12A 33 S VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current G 0.7 1 V 12 A DYNAM
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