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AOD11S60 - Power Transistor

General Description

The AOD11S60 & AOI11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.

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AOD11S60/AOI11S60 600V 11A α MOS TM Power Transistor General Description Product Summary The AOD11S60 & AOI11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 45A 0.399Ω 11nC 2.