AOD200
Description
The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low bination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Product Summary
ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 36A < 7.8mΩ < 11mΩ
100% UIS Tested 100% Rg Tested
TO252 DPAK
Top View D D
Bottom View
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS
Maximum 30
Units V
±20
Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current
TC=25° C TC=100° C C TA=25° TA=70° C
ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG
36 28 120 14 11 28 39 50 25 2.5 1.6 -55 to 175 A A m J W W ° C A
Avalanche energy L=0.1m H C TC=25° Power Dissipation Power Dissipation
TC=...
