Datasheet Details
| Part number | AOD3T40P |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 459.23 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AOD3T40P Datasheet
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| Part number | AOD3T40P |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 459.23 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AOD3T40P Datasheet
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• Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 320V Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom 100% UIS Tested 100% Rg Tested 500V 6.5A < 3.3Ω 3nC 0.4µJ TO-252 DPAK D Top View Bottom View D D S G G S AOD3T40P Orderable Part Number AOD3T40P Package Type TO-252 G S Form Minimum Order Quantity Tape & Reel 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 400 ±30 2 1.3 6.5 3 4.5 36 50 5 35 0.3 -55 to 150 300 Units V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 40 3 Maximum 50 0.5 3.6 Units °C/W °C/W °C/W Rev.1.0: August 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=320V, VGS=0V VDS=400V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resis
AOD3T40P 400V,2A N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD3T40P | N-Channel MOSFET | INCHANGE |
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