AOD410 Datasheet | Alpha & Omega Semiconductors

Description The AOD410 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. AOD410L( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 8A RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.5V) TO-252 D-PAK Top View Drain Connected to Tab Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current Maximum 30 ±20 8 6 20 8 10 25 12.5 2.1 1.33 -55 to 175 Units V V A A m J W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1m H Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 20 46 5.3 Max 30 60 7 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD410, AOD410L Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) g FS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=2A Forward Transconductance VDS=5V, ID=8A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250 µA, VGS=0V VDS=24V, V GS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250 µA VGS=4.5V, VDS=5V VGS=10V, ID=8A TJ=125°C 1 10 48 76 75 6.2 0.75 1 4.3 288 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 57 39 3 6.72 VGS=10V, V DS=15V, ID=8A 3.34 0.76 1.78 3.7 VGS=10V, V DS=15V, R L=1.8Ω, RGEN=3Ω IF=8A, d I/dt=100A/ µs IF=8A, d I/dt=100A/ µs Min 30 Typ Max Units V 1 5 100 1.8 3 65 100 105 µA n A V...