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AOD410 - N-Channel MOSFET

Description

The AOD410 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

AOD410L( Green Product ) is offered in a lead-free package.

Features

  • VDS (V) = 30V ID = 8A RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C B Maximum 30 ±20 8 6 20 8 10 25 12.5 2.1 1.33 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche en.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Rev3: Nov 2004 AOD410, AOD410L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AOD410 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. AOD410L( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 8A RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C B Maximum 30 ±20 8 6 20 8 10 25 12.5 2.1 1.
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