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AOD412 - N-Channel MOSFET

Description

The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance.

This device is ideally suited for use as a high side switch in CPU core power conversion.

Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.0mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A C Maximum 30 ±20 85 65 200 30 120 100 50 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TC=25°C G TC=100°C B ID IDM IAR EAR PD P.

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www.DataSheet4U.com AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specifications). AOD412L is a Green Product ordering option. AOD412 and AOD412L are electrically identical. TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.0mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.
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