Datasheet4U Logo Datasheet4U.com

AOD4120 - N-Channel MOSFET

Description

The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard product AOD4120 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • 1.4 VDS (V) = 20V ID = 25A (VGS = 10V) RDS(ON).

📥 Download Datasheet

Datasheet preview – AOD4120

📁 Similar Datasheet

  • AOD4120 - N-Channel MOSFET (INCHANGE)
  • AOD4124 - N-Channel MOSFET (INCHANGE)
  • AOD4126 - N-Channel MOSFET (INCHANGE)
  • AOD4128 - N-Channel MOSFET (INCHANGE)
  • AOD4102 - N-Channel MOSFET (INCHANGE)
  • AOD4130 - N-Channel MOSFET (INCHANGE)
  • AOD4132 - N-Channel MOSFET (INCHANGE)
  • AOD4136 - N-Channel MOSFET (INCHANGE)
  • AOD413A - N-Channel MOSFET (INCHANGE)
  • AOD4144 - N-Channel 30V MOSFET (VBsemi)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AOD4120 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD4120 is Pb-free (meets ROHS & Sony 259 specifications). AOD4120L is a Green Product ordering option. AOD4120 and AOD4120L are electrically identical. TO-252 D-PAK Features 1.4 VDS (V) = 20V ID = 25A (VGS = 10V) RDS(ON) <18 mΩ (VGS = 10V) RDS(ON) <25 mΩ (VGS = 4.5V) RDS(ON) <75 mΩ (VGS = 2.5V) 193 UIS Tested 18 Rg,Ciss,Coss,Crss Tested D Top View Drain Connected to Tab G S G www.DataSheet4U.
Published: |