Datasheet4U Logo Datasheet4U.com

AOD413A - 40V P-Channel MOSFET

Description

The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.

Features

  • VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 44mW (VGS = -10V) RDS(ON) < 66mW (VGS = -4.5V) 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,H TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy L=0.1mH C EAR Power Dissipation B TC=25.

📥 Download Datasheet

Datasheet preview – AOD413A

📁 Similar Datasheet

  • AOD413A - N-Channel MOSFET (INCHANGE)
  • AOD4130 - N-Channel MOSFET (INCHANGE)
  • AOD4132 - N-Channel MOSFET (INCHANGE)
  • AOD4136 - N-Channel MOSFET (INCHANGE)
  • AOD4102 - N-Channel MOSFET (INCHANGE)
  • AOD4120 - N-Channel MOSFET (INCHANGE)
  • AOD4124 - N-Channel MOSFET (INCHANGE)
  • AOD4126 - N-Channel MOSFET (INCHANGE)
  • AOD4128 - N-Channel MOSFET (INCHANGE)
  • AOD4144 - N-Channel 30V MOSFET (VBsemi)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AOD413A 40V P-Channel MOSFET General Description The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 44mW (VGS = -10V) RDS(ON) < 66mW (VGS = -4.5V) 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,H TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy L=0.
Published: |