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AOD4132 - 30v N-Channel MOSFET

General Description

The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

This device is ideally suited for use as a low side switch in CPU core power conversion.

Key Features

  • es VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4mW (VGS = 10V) RDS(ON) < 6mW (VGS = 4.5V) 100% UIS Tested 100% Rg Tested TO-252 Top View D-PAK Bottom View D D G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C G Current B,G TC=100°C B ID Pulsed Drain Current IDM Avalanche Current C IAR Repetitive avalanche energy L=0.1mH C EAR TC=25°C Power Dissipation B TC=1.

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Full PDF Text Transcription (Reference)

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AOD4132 30v N-Channel MOSFET General Description The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4mW (VGS = 10V) RDS(ON) < 6mW (VGS = 4.5V) 100% UIS Tested 100% Rg Tested TO-252 Top View D-PAK Bottom View D D G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C G Current B,G TC=100°C B ID Pulsed Drain Current IDM Avalanche Current C IAR Repetitive avalanche energy L=0.