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AOD413A - 40V P-Channel MOSFET

General Description

The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.

Key Features

  • VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 44mW (VGS = -10V) RDS(ON) < 66mW (VGS = -4.5V) 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,H TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy L=0.1mH C EAR Power Dissipation B TC=25.

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Full PDF Text Transcription (Reference)

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AOD413A 40V P-Channel MOSFET General Description The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 44mW (VGS = -10V) RDS(ON) < 66mW (VGS = -4.5V) 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,H TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy L=0.