Datasheet Details
| Part number | AOD418 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 302.41 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
 AOD418 Datasheet
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| Part number | AOD418 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 302.41 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
AOD418 Datasheet
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The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.
With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications.
Product Summary VDS ID (at VGS= 10V) RDS(ON) (at VGS= 10V) RDS(ON) (at VGS = 4.5V) 30V 36A < 7.5mΩ < 11mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D D Bottom View Top View TO251A IPAK Bottom View D S G S G G D G S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A C Maximum 30 ±20 36 28 125 13.5 10.5 27 36 50 25 2.5 1.6 -55 to 175 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W °C TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 41 2.5 Max 20 50 3 Units °C/W °C/W °C/W Rev 0: February 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD418/AOI418 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TO252 VGS=4.5V, ID=20A TO252 VGS=10V, ID=20A TO251A VGS=4.5V, ID=20A TO251A gFS VSD IS Forward Transconductance VDS=5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous CurrentG 920 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 125 60 0.55 16 VGS=10V, VDS=15V, ID=20A 7.6 TJ=125°C 1.5 125 6.2 9.5 8.5 6.7 9 63 0.72 1 36 1150 180 105 1.1 20 9.5 2.7 5 6.5 VGS=10V, VDS=
AOD418/AOI418 30V N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOD418 | N-Channel MOSFET | INCHANGE |
|
AOD4180 | N-Channel MOSFET | INCHANGE |
|
AOD4182 | N-Channel MOSFET | INCHANGE |
|
AOD4184 | N-Channel MOSFET | INCHANGE |
 |
AOD4184 | N-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AOD4180 | 80V N-Channel MOSFET |
| AOD4182 | 80V N-Channel MOSFET |
| AOD4184 | 40V N-Channel MOSFET |
| AOD4184A | 40V N-Channel MOSFET |
| AOD4185 | 40V P-Channel MOSFET |
| AOD4186 | 40V N-Channel MOSFET |
| AOD4187 | P-Channel MOSFET |
| AOD4189 | P-Channel MOSFET |
| AOD410 | N-Channel MOSFET |
| AOD4100 | N-Channel MOSFET |