The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
AOD4186-VB
AOD4186-VB Datasheet
N-Channel 4 0-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () 0.012 at VGS = 10 V 0.014 at VGS = 4.5 V
ID (A)a, e 55 45
Qg (Typ) 42 nC
TO-252
FEATURES
• Trench Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
D
• OR-ing • Server • DC/DC
G
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS L = 0.
AOD4186 Datasheet
