Datasheet4U Logo Datasheet4U.com

AOD4189 - P-Channel MOSFET

Key Features

  • TrenchFET® power MOSFET.
  • Package with low thermal resistance.
  • 100 % Rg and UIS tested S G GDS Top View D P-Channel MOSFET.

📥 Download Datasheet

Datasheet Details

Part number AOD4189
Manufacturer VBsemi
File Size 375.83 KB
Description P-Channel MOSFET
Datasheet download datasheet AOD4189 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AOD4189 P-Channel MOSFET Alpha & Omega Semiconductors
AOD4189 P-Channel MOSFET INCHANGE
AOD418 N-Channel MOSFET INCHANGE
AOD418 30V N-Channel MOSFET Alpha & Omega Semiconductors
AOD4180 80V N-Channel MOSFET Alpha & Omega Semiconductors

Other Datasheets by VBsemi

Part Number Description
AOD4184 N-Channel MOSFET
AOD4185 P-Channel MOSFET
AOD4186 N-Channel 40V MOSFET
AOD4144 N-Channel 30V MOSFET
AOD400 N-channel 30V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AOD4189 www.VBsemi.com AOD4189 Datasheet P-Channel 4 0 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS = -4.5 V ID (A) Configuration -40 0.012 0.015 -50 Single TO-252 FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C a TC = 125 °C L = 0.