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Alpha & Omega Semiconductors

AOD421 Datasheet Preview

AOD421 Datasheet

P-Channel MOSFET

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AOD421
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD421 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for load switching. It is ESD
protected. Standard Product AOD421 is Pb-free
(meets ROHS & Sony 259 specifications). AOD421L
is a Green Product ordering option. AOD421 and
AOD421L are electrically identical.
TO-252
D-PAK
Features
VDS (V) = -20V
ID = -12.5 A (VGS = -10V)
RDS(ON) < 75m(VGS = -10V)
RDS(ON) < 95m(VGS = -4.5V)
RDS(ON) < 145m(VGS = -2.5V)
ESD Rating: 2000V HBM
D
Top View
Drain Connected
to Tab
G
S
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current G
TA=70°C
Pulsed Drain Current C
ID
IDM
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
-20
±12
-12.5
-8.9
-30
18.8
9.4
2
1.33
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
23
50
6
Max
28
60
8
Units
V
V
A
W
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.




Alpha & Omega Semiconductors

AOD421 Datasheet Preview

AOD421 Datasheet

P-Channel MOSFET

No Preview Available !

AOD421
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-16V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±10V
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-12.5A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-12.5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
-20
-0.7
-15
-1
-0.9
61
83
75
110
8.8
-0.81
-0.5
-2.5
±1
±10
-1.4
75
105
95
145
-8.5
V
µΑ
µA
µA
V
A
m
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
512 620
77
62
9.2 13
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
VGS=-4.5V, VDS=-10V,
ID=-12.5A
VGS=-10V, VDS=-10V, RL=0.75,
RGEN=3
4.6
0.9
2.1
5.2
38
17
31
nC
nC
nC
ns
ns
ns
ns
trr Body Diode Reverse Recovery Time IF=-12.5A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-12.5A, dI/dt=100A/µs
19 ns
6.3 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
I. Revision 0: July 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.



Part Number AOD421
Description P-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 5 Pages
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AOD421 Datasheet PDF





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