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AOD422 - N-Channel MOSFET

Datasheet Summary

Description

The AOD422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

Features

  • VDS (V) = 20V ID = 10 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C Maximum 20 ±8 10 10 30 15 26 50 20 2.5 1.6 -55.

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Datasheet preview – AOD422

Datasheet Details

Part number AOD422
Manufacturer Alpha & Omega Semiconductors
File Size 165.52 KB
Description N-Channel MOSFET
Datasheet download datasheet AOD422 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com Rev 2: Sep 2004 AOD422, AOD422L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description The AOD422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AOD422L (Green Product) is offered in a Lead Free package. Features VDS (V) = 20V ID = 10 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.
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