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AOD421 - P-Channel MOSFET

Datasheet Summary

Description

The AOD421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for load switching.

It is ESD protected.

Features

  • VDS (V) = -20V ID = -12.5 A (VGS = -10V) RDS(ON) < 75mΩ (VGS = -10V) RDS(ON) < 95mΩ (VGS = -4.5V) RDS(ON) < 145mΩ (VGS = -2.5V) ESD Rating: 2000V HBM D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Power Dissipation B Power Dissipation A C Maximum -20 ±12 -12.5 -8.9 -30 18.8 9.4 2 1.33 -55 to 175 Units V V A TA=25°C TA=70°.

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Datasheet Details

Part number AOD421
Manufacturer Alpha & Omega Semiconductors
File Size 144.02 KB
Description P-Channel MOSFET
Datasheet download datasheet AOD421 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com AOD421 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for load switching. It is ESD protected. Standard Product AOD421 is Pb-free (meets ROHS & Sony 259 specifications). AOD421L is a Green Product ordering option. AOD421 and AOD421L are electrically identical. TO-252 D-PAK Features VDS (V) = -20V ID = -12.5 A (VGS = -10V) RDS(ON) < 75mΩ (VGS = -10V) RDS(ON) < 95mΩ (VGS = -4.5V) RDS(ON) < 145mΩ (VGS = -2.
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