Datasheet Details
| Part number | AOD510 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 332.33 KB |
| Description | 30V N-Channel MOSFET |
| Download | AOD510 Download (PDF) |
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| Part number | AOD510 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 332.33 KB |
| Description | 30V N-Channel MOSFET |
| Download | AOD510 Download (PDF) |
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|
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 70A < 2.6mΩ < 4mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested TO252 DPAK TopView Bottom View Top View TO-251A IPAK Bottom View D D D G D G S D S G G D S S D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current VDS Spike Power Dissipation B Power Dissipation A C Maximum 30 ±20 70 54 280 45 37 45 101 36 60 30 7.5 5.2 -55 to 175 Units V V A VGS TC=25° C TC=100° C TA=25° C C TA=70° ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG 100ns TC=25° C TC=100° C TA=25° C TA=70° C A A mJ V W W ° C Avalanche energy L=0.1mH C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16 41 1.9 Max 20 50 2.5 Units ° C/W ° C/W ° C/W Rev 0: Feb.
2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AOD510/AOI510 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.2 1.7 2.1 2.7 3.2 85 0.7 1 70 2719 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.9 1204 169 2 44 VGS=10V, VDS=15V, ID=20A 21 9 7 9.7 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=5
AOD510/AOI510 30V N-Channel AlphaMOS General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOD510 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOD514 | 30V N-Channel MOSFET |
| AOD516 | 30V N-Channel MOSFET |
| AOD518 | 30V N-Channel MOSFET |
| AOD502 | 25V N-Channel MOSFET |
| AOD504 | 25V N-Channel MOSFET |
| AOD508 | 30V N-Channel MOSFET |
| AOD522P | 30V N-Channel AlphaMOS |
| AOD526 | 30V N-Channel MOSFET |
| AOD528 | 30V N-Channel MOSFET |
| AOD536 | 30V N-Channel AlphaMOS |