Datasheet Details
| Part number | AOD516 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 326.27 KB |
| Description | 30V N-Channel MOSFET |
| Download | AOD516 Download (PDF) |
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| Part number | AOD516 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 326.27 KB |
| Description | 30V N-Channel MOSFET |
| Download | AOD516 Download (PDF) |
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|
|
• Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 46A < 5mΩ < 10mΩ TO252 DPAK: AOD516 TopView Bottom View TO-251B IPAK: AOI516/AOY516 Top View Bottom View D DD DS G DG S S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 46 36 170 18 14 29 42 36 50 25 2.5 1.6 -55 to 175 G D S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16 41 2.5 Max 20 50 3 G S Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev.5.0: July 2013 www.aosmd.com Page 1 of 6 AOD516/AOI516/AOY516 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.8 2.2 2.6 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 45 mΩ 5.4 6.8 VGS=4.5V, ID=20A 7.1 10 mΩ gFS Forward Transconductance VDS=5V, ID=20A 83
AOD516/AOI516/AOY516 30V N-Channel AlphaMOS General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOD516 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOD510 | 30V N-Channel MOSFET |
| AOD514 | 30V N-Channel MOSFET |
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| AOD504 | 25V N-Channel MOSFET |
| AOD508 | 30V N-Channel MOSFET |
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| AOD528 | 30V N-Channel MOSFET |
| AOD536 | 30V N-Channel AlphaMOS |