Datasheet Details
| Part number | AOD536 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 360.98 KB |
| Description | 30V N-Channel AlphaMOS |
| Datasheet |
 AOD536 Datasheet
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| Part number | AOD536 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 360.98 KB |
| Description | 30V N-Channel AlphaMOS |
| Datasheet |
AOD536 Datasheet
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• Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 46A < 8.5mΩ < 14.7mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested TO252 D DPAK TopView Bottom View D DS G DG S Orderable Part Number AOD536 Package Type TO-252 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain CurrentG TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10μs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 15 40 Maximum Junction-to-Case Steady-State RqJC 3.3 G Form Tape & Reel S Minimum Order Quantity 2500 Maximum 30 ±20 46 36 127 20.5 16.5 24 29 36 37.5 18.5 6.2 4 -55 to 175 Units V V A A A mJ V W W °C Max Units 20 °C/W 50 °C/W 4 °C/W Rev.1.1: January 2024 www.aosmd.com Page 1 of 6 AOD536 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS
AOD536 30V N-Channel AlphaMOS General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD536 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOD538 | 30V N-Channel MOSFET |
| AOD502 | 25V N-Channel MOSFET |
| AOD504 | 25V N-Channel MOSFET |
| AOD508 | 30V N-Channel MOSFET |
| AOD510 | 30V N-Channel MOSFET |
| AOD514 | 30V N-Channel MOSFET |
| AOD516 | 30V N-Channel MOSFET |
| AOD518 | 30V N-Channel MOSFET |
| AOD522P | 30V N-Channel AlphaMOS |
| AOD526 | 30V N-Channel MOSFET |