Datasheet Details
| Part number | AOH3254 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 235.17 KB |
| Description | 150V N-Channel MOSFET |
| Download | AOH3254 Download (PDF) |
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| Part number | AOH3254 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 235.17 KB |
| Description | 150V N-Channel MOSFET |
| Download | AOH3254 Download (PDF) |
|
|
|
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested 150V 5A < 63mΩ < 77mΩ SOT223 D Top View Bottom View D D S D G G D S G S Orderable Part Number AOH3254 Package Type SOT223 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.3mH C EAS VDS Spike 10µs VSPIKE TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Form Tape & Reel Minimum Order Quantity 2500 Maximum 150 ±20 5 4 20 15 34 180 4.1 2.6 -55 to 150 Units V V A A mJ V W °C Typ Max Units 25 30 °C/W 50 60 °C/W 10 15 °C/W Rev.1.0: May 2015 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=150V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=5A Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=2A VDS=5V, ID=5A IS=1A,VGS=0V Maximum Body-Diode Continuous Current 150 TJ=55°C 1.7 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=7
AOH3254 150V N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AOH3106 | 100V N-Channel MOSFET |
| AOH3110 | 100V N-Channel MOSFET |
| AOH011V12AM2 | 1200V Silicon Carbide Half-Bridge Module |