| Description | • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger,PD Adapter,TV,lighting Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 800V 48A < 0.36Ω 22.5nC 2.8mJ TO-252 DPAK TO-251A IPAK D TopView... |
| Features |
rgy C
Single pulsed avalanche energy H
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
VGS
ID
IDM IAR EAR EAS dv/dt
TC=25°C Power Dissipation B Derate above 25°C
PD
Maximum 700 ±20 ±30 12 7.6 48 3.4 5.8 50 100 20 138 1.1
Units V V V
A
A mJ mJ V/ns W W/°C
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Maximum lead temper...
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| Datasheet |
 AOI360A70 Datasheet 667.15KB |
