Datasheet Details
| Part number | AOI409 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 366.46 KB |
| Description | 60V P-Channel MOSFET |
| Datasheet |
 AOI409 Datasheet
|
|
|
| Part number | AOI409 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 366.46 KB |
| Description | 60V P-Channel MOSFET |
| Datasheet |
AOI409 Datasheet
|
|
|
|
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -60V -26A < 40mΩ < 55mΩ Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested TO252 TO-251A TopView DPAK Bottom View Top View IPAK Bottom View D D D DS D G S Orderable Part Number AOD409 AOI409 G DS G Package Type TO-252 TO-251A S DG Form Tape & Reel Tube G S Minimum Order Quantity 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -60 ±20 -26 -18 -80 -26 34 60 30 2.5 1.6 -55 to 175 Units V V A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State Maximum Junction-to-Case Steady-State Symbol RqJA RqJC Typ 16.7 40 1.9 Max 25 50 2.5 Units °C/W °C/W °C/W Rev.7.1: August 2023 www.aosmd.com Page 1 of 6 AOD409/AOI409 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage ID=-250μA, VGS=0V -60 Zero Gate Voltage Drain Current VDS=-48V, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=-250mA -1.2 On state drain current VGS=-10V, VDS=-5V -80 VGS=-10V, ID=-20A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-20A Forward Transconductance VDS=-5V, ID=-20A Diode For
AOD409/AOI409 60V P-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOI409 | P-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOI403 | 30V P-Channel MOSFET |
| AOI4102 | 30V N-Channel MOSFET |
| AOI4126 | 100V N-Channel MOSFET |
| AOI4130 | 60V N-Channel MOSFET |
| AOI4146 | 30V N-Channel MOSFET |
| AOI418 | 30V N-Channel MOSFET |
| AOI4184 | 40V N-Channel MOSFET |
| AOI4185 | 40V P-Channel MOSFET |
| AOI423 | P-Channel MOSFET |
| AOI4286 | 100V N-Channel MOSFET |