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AOI418 - 30V N-Channel MOSFET

General Description

The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications.

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Other Datasheets by Alpha & Omega Semiconductors

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AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Product Summary VDS ID (at VGS= 10V) RDS(ON) (at VGS= 10V) RDS(ON) (at VGS = 4.5V) 30V 36A < 7.5mΩ < 11mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D D Bottom View Top View TO251A IPAK Bottom View D S G S G G D G S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.