Electrical Characteristics (TJ=25°C unless otherwise noted)
Min Typ Max Units
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V, TJ=25°C
ID=250μA, VGS=0V, TJ=150°C
Breakdown Voltage Temperature
Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=14A
gFS Forward Transconductance
VSD Diode Forward Voltage
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current C
3.3 3.9 4.5 V
0.108 0.125 Ω
Effective output capacitance, energy
Effective output capacitance, time
VGS=0V, VDS=100V, f=1MHz
VGS=0V, VDS=0 to 480V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=100V, f=1MHz
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=480V, ID=14A
Gate Drain Charge
Turn-On Rise Time
VGS=10V, VDS=400V, ID=14A,
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
IF=14A, dI/dt=100A/ms, VDS=400V
Body Diode Reverse Recovery Charge
A. The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
D. The R qJA is the sum of the thermal impedance from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=4.3A, RG=25Ω, Starting TJ=25°C.
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
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Rev3.0: January 2020
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