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AOL1400 - N-Channel FET

Description

The AOL1400 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and good body diode characteristics.

This device is ideally suited for use as a low side switch in CPU core power conversion.

Standard product AOL1400 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 85A (V GS = 10V) RDS(ON) < 4.5mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) Ultra SO-8TM Top View Fits SOIC8 footprint ! Bottom tab connected to drain D D G S S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25°C G TC=100°C B ID IDM IDSM IAR C Maximum 30 ±12 85 70 200 17 13 30 145 100 50 2.1 1.3 -55 to 175 Units V V Pulsed Drain Current Continuous Drain TA=25°C.

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www.DataSheet4U.com AOL1400 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1400 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and good body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard product AOL1400 is Pb-free (meets ROHS & Sony 259 specifications). AOL1400L is a Green Product ordering option. AOL1400 and AOL1400L are electrically identical. Features VDS (V) = 30V ID = 85A (V GS = 10V) RDS(ON) < 4.5mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.
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