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AOL1401 - P-Channel FET

Datasheet Summary

Description

The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

Features

  • VDS (V) = -38V ID = -85A RDS(ON) < 8.5mΩ (VGS = -10V) RDS(ON) < 10mΩ (VGS = -4.5V) ESD Rating: 3000V HBM D Bottom tab connected to drain G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current G Power Dissipation B Power Dissipation A C Maximum -38 ±25 -85 -62 -120 -12 -9 100 50 2.1 1.3 -55 to 175 Units V V TC=25°C TC=100°C TA=25°C TA=70°C TC=.

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Datasheet Details

Part number AOL1401
Manufacturer Alpha & Omega Semiconductors
File Size 149.06 KB
Description P-Channel FET
Datasheet download datasheet AOL1401 Datasheet
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www.DataSheet4U.com AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AOL1401 is Pbfree (meets ROHS & Sony 259 specifications). AOL1401L is a Green Product ordering option. AOL1401 and AOL1401L are electrically identical. Ultra SO-8TM Top View Fits SOIC8 footprint ! D Features VDS (V) = -38V ID = -85A RDS(ON) < 8.5mΩ (VGS = -10V) RDS(ON) < 10mΩ (VGS = -4.
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