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AOL1422 - N-Channel MOSFET

Datasheet Summary

Description

The AOL1422 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is ESD protected and it is suitable for use in load switching and general purpose applications.

Ultra SO-8TM Top View Fe

Features

  • VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.7mΩ (VGS = 10V) RDS(ON) < 5.4mΩ (VGS = 4.5V) Rg,Ciss,Coss,Crss Tested D S G D Bottom tab connected to drain G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,H TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current G TA=25°C TA=70°C IDSM TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation.

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Datasheet Details

Part number AOL1422
Manufacturer Alpha & Omega Semiconductors
File Size 142.53 KB
Description N-Channel MOSFET
Datasheet download datasheet AOL1422 Datasheet
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AOL1422 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1422 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use in load switching and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* Ultra SO-8TM Top View Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.7mΩ (VGS = 10V) RDS(ON) < 5.4mΩ (VGS = 4.
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