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AOL1422 - N-Channel MOSFET

General Description

The AOL1422 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is ESD protected and it is suitable for use in load switching and general purpose applications.

Ultra SO-8TM Top View Fe

Key Features

  • VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.7mΩ (VGS = 10V) RDS(ON) < 5.4mΩ (VGS = 4.5V) Rg,Ciss,Coss,Crss Tested D S G D Bottom tab connected to drain G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,H TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current G TA=25°C TA=70°C IDSM TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation.

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Full PDF Text Transcription for AOL1422 (Reference)

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AOL1422 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1422 uses advanced trench technology and design to provide excellent RDS(ON) with lo...

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nced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use in load switching and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* Ultra SO-8TM Top View Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.7mΩ (VGS = 10V) RDS(ON) < 5.4mΩ (VGS = 4.