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AOL1420 - N-Channel FET

Datasheet Summary

Description

The AOL1420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

This device is ideally suited for use as a low side switch in CPU core power conversion.

Standard Product AOL1420 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.7mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested D D G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Continuous Drain Current G Avalanche Current C C Maximum 30 ±20 85 63 150 29 27 30 112 100 50 5 3 -55 to 175 Units V V TC=25°C G TC=100°C B TA=25°C TA=70°C ID IDM IDSM IAR EAR.

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Datasheet Details

Part number AOL1420
Manufacturer Alpha & Omega Semiconductors
File Size 233.59 KB
Description N-Channel FET
Datasheet download datasheet AOL1420 Datasheet
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www.DataSheet4U.com AOL1420 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1420 is Pb-free (meets ROHS & Sony 259 specifications). AOL1420L is a Green Product ordering option. AOL1420 and AOL1420L are electrically identical. Ultra SO-8TM Top View Fits SOIC8 footprint ! Bottom tab connected to drain Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 3.7mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.
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