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AOL1408 - N-Channel FET

Description

The AOL1408 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.

This device is ideally suited for use as a low side switch in CPU core power conversion.

Standard Product AOL1408 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 6mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D Fits SOIC8 footprint ! D Bottom tab connected to drain S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G Maximum 30 ±20 85 73 200 27 22 30 45 100 50 5 3 -55 to 175 Units V V TC=100°C B Pulsed Drain Current Continuous Dra.

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www.DataSheet4U.com AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1408 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1408 is Pb-free (meets ROHS & Sony 259 specifications). AOL1408L is a Green Product ordering option. AOL1408 and AOL1408L are electrically identical. Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 6mΩ (VGS = 4.
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