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AOL1418 - N-Channel FET

Description

The AOL1418 uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance.

This device is ideally suited for use as a high side switch in CPU core power conversion.

Standard Product AOL1418 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V) Fits SOIC8 footprint ! D Bottom tab connected to drain G S S G Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25°C G TC=100°C ID IDM IDSM IAR C Maximum 30 ±20 85 70 200 15 12 30 135 100 50 2.5 1.6 -55 to 175 Units V V Pulsed Drain Current Continuous Drain TA=25°C Current G TA=70°C Avalanche.

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www.DataSheet4U.com AOL1418 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1418 uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOL1418 is Pb-free (meets ROHS & Sony 259 specifications). AOL1418L is a Green Product ordering option. AOL1418 and AOL1418L are electrically identical. Ultra SO-8TM Top View D Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.
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