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AOL1432 - N-Channel FET

Description

The AOL1432 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard product AOL1432 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) =25V ID = 44 A (VGS = 10V) RDS(ON) < 8.5 mΩ (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested D Ultra SO-8TM Top View D Fits SOIC8 footprint ! S G Bottom tab connected to drain G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Maximum Symbol VDS Drain-Source Voltage 25 VGS Gate-Source Voltage ±20 TC=25°C 44 Continuous Drain Current TC=100°C 31 ID Pulsed Drain Current Continuous Drain Current G Avalanche Current C C C Units V V A IDM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AOL1432 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1432 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOL1432 is Pb-free (meets ROHS & Sony 259 specifications). AOL1432L is a Green Product ordering option. AOL1432 and AOL1432L are electrically identical. Features VDS (V) =25V ID = 44 A (VGS = 10V) RDS(ON) < 8.5 mΩ (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 4.
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